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In the era of big data, the total amount of information is exploding, and massive data needs to be effectively processed and stored. Therefore, the requirements for low power consumption, miniaturization, and multi-functional integration have been proposed for information devices. However, in the traditional von Neumann architecture, since the memory and the processor exist separately, the computer must consume a large number of operation cycles to find and transfer data between different levels of memory, and can only execute instructions and various calculation tasks one by one. , limits the current computer's parallel processing capabilities. The Chinese Academy of Sciences Key Laboratory of Magnetic Materials and Devices (Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences) Li Runwei's research team conducted a forward-looking study of the resistance and magnetic states of storage media based on multiphysics, with a view to exploring new information storage models and improvements. Functional integration of information devices.
In general, optoelectronic information interconnect chips can integrate components such as light sources, controllers, filters, operators, detectors, and memory. Introducing the optical path into the circuit can collectively accomplish the coding, transmission, decoding, calculation, processing, and storage of information, and is expected to be an alternative to information processing and storage technology in the post-Moore era. Among them, the main components include an independent optical information storage device (that is, information stored by optical writing) and information processing devices. The multiple functions of the integrated optoelectronic information memory can simultaneously process and store the information, which can reduce the complexity of the integrated circuit, and is expected to be used for the dramatic increase of massive information processing and storage.
Recently, the team's Tan Hongwei and researcher Liu Gang and others used the light pulse and electric field to control the concentration of electrons in the defect state at the metal-semiconductor Schottky contact surface, and obtained the erasable and sustainable photoconductive effect of the electric field; further research found that The sustainable photoconductivity is linear with illumination time and has a broad spectrum response from visible to ultraviolet. Based on this effect, they designed a new type of information processing and storage device that integrates encoding/decoding, computation, and storage of optical information.
In this multi-functional device, information can be encoded or decoded using the color (frequency) and intensity of light, respectively, and the optical signal can be counted or numerically operated using the linear response characteristics of the number of light pulses; based on sustainable light The response effect can store the multi-state information of the above-mentioned decoding or operation results, thereby realizing the real-time acquisition, processing and storage of optical information, that is, the integration of photoelectric conversion, numerical calculation and information storage functions in one device. The related results were applied for one China invention patent (201510114334.6) and was published as the bottom cover paper in Advanced Materials (DOI:10.1002/adma. 201500039).
On the other hand, magnetic storage has always been the mainstream technology for information storage. Whether it is a traditional hard disk or an emerging magnetic random access memory, information is usually written in an external magnetic field or current manner, which is very unfavorable for the miniaturization of devices and the development of low power consumption. Therefore, it has become a research hotspot in the past decade to seek an effective method of controlling magnetic properties at the nanometer scale by an electric field. The team's Chen Xinxin, Zhu Xiaojian, Liu Gang, and others collaborated with Ding Jun, a professor at the National University of Singapore. Based on the ion-immobilized stochastic storage technology, it proposes that the direction of magnetization of ferrite thin-film materials can be controlled by the electric field-induced ion transport at the nanometer scale. New ideas. By first-principles calculations, cobalt ions in cobalt-ferrite materials (CoFe2-xO4) with iron defects can migrate and rearrange under the action of an electric field, thereby inducing unidirectional magnetic anisotropy.
Subsequently, they applied voltage on the nanoscale CoFe2-xO4 film using a scanning probe technique, and observed the evolution of the domain magnetic domain in situ, confirming that the applied electric field can make the magnetization direction of the CoFe2-xO4 film non-volatile. The reversible flip-flop achieves the adjustment of the magnetic moment direction by the electric field at the nanometer scale. The method for realizing the magnetic field regulation by the electric field does not require the assistance of a low-temperature environment and a magnetic field, and provides a new approach for the development of novel information storage technologies and electric field-regulated spintronic devices. The related results were recently published on ACS Nano (DOI:10.1021/acsnano.5b00456).
The above research work was supported by the national "973" subproject, the National Natural Science Foundation of China, the Chinese Academy of Sciences Equipment Program, and the Chinese Academy of Sciences Youth Promotion Association.
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